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1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package

    Buy cheap 1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package from wholesalers
     
    Buy cheap 1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package from wholesalers
    • Buy cheap 1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package from wholesalers
    • Buy cheap 1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package from wholesalers
    • Buy cheap 1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package from wholesalers

    1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package

    Ask Lasest Price
    Brand Name : trusTec
    Model Number : 1N5820 THUR 1N5822
    Certification : ROHS
    Price : Negotiable (EXW/FOB/CNF)
    Payment Terms : T/T
    Supply Ability : 800KK PCS per month
    Delivery Time : 10 work days fresh products
    • Product Details
    • Company Profile

    1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package

    1N5820 THRU 1N5822
    SCHOTTKY BARRIER RECTIFIERS
    Reverse Voltage - 20 to 40 Volts Forward Current - 3.0 Ampere

    Product size



    MAXIMUM RATINGS
    Ratings at 25 C ambient temperature unless otherwise specified.
    Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.
    SYMBOLS1N58201N58211N5822UNITS
    Maximum repetitive peak reverse voltage
    VRRM
    20
    30
    40
    VOLTS
    Maximum RMS voltage
    VRMS
    		142128
    VOLTS
    Maximum DC blocking voltage
    VDC
    20
    30
    40
    VOLTS
    Maximum average forward rectified current 0.375”(9.5mm) lead length at TL=90 ℃
    I(AV)
    3.0
    		Amp
    Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
    IFSM
    		25.0Amps
    Maximum instantaneous forward voltage at 1.0A
    VF
    0.450
    0.550
    0.600
    		Volts
    Maximum DC reverse current TA=25 ℃
    at rated DC blocking voltage TA=100 ℃
    IR
    0.5
    10.0
    		mA
    Typical junction capacitance (NOTE 1)
    CJ
    110.0
    		pF
    Typical thermal resistance (NOTE 2)
    RθJA
    50.0
    		℃/W
    Operating junction and storage temperature range
    TJ,TSTG
    -65 to +125
    		℃
    Note:
    1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
    2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

    FEATURES
    Plastic package has Underwriters Laboratory Flammability Classification 94V-0
    Metal silicon junction,majority carrier conduction
    Guardring for overvoltage protection
    Low power loss,high erriciency
    High current capability,low forward voltage drop
    High surge capability
    For use in low voltage,high frequency inverters, free wheeling,and polarity protection applications
    High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
    MECHANICAL DATA
    Case: JEDEC DO-201AD molded plastic body
    Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026
    Polarity: Color band denotes cathode end
    Mounting Position: Any
    Weight:0.04 ounce, 1.10 grams
    RATINGS AND CHARACTERISTICS
    Ratings at 25 C ambient temperature unless otherwise specified.
    Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.
    SYMBOLS1N58201N58211N5822UNITS
    Maximum repetitive peak reverse voltage
    VRRM
    20
    30
    40
    VOLTS
    Maximum RMS voltage
    VRMS
    		142128
    VOLTS
    Maximum DC blocking voltage
    VDC
    20
    30
    40
    VOLTS
    Maximum average forward rectified current 0.375”(9.5mm) lead length at TL=90 ℃
    I(AV)
    3.0
    		Amp
    Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
    IFSM
    		80.0Amps
    Maximum instantaneous forward voltage at 1.0A
    VF
    0.475
    0.500
    0.525
    		Volts
    Maximum DC reverse current TA=25 ℃
    at rated DC blocking voltage TA=100 ℃
    IR
    0.5
    40.0
    		mA
    Typical junction capacitance (NOTE 1)
    CJ
    300.0
    		pF
    Typical thermal resistance (NOTE 2)
    RθJA
    40.0
    		℃/W
    Operating junction and storage temperature range
    TJ,TSTG
    -65 to +125
    		℃
    Note:
    1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
    2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
    Characteristic Curves

    Product Tags:

    1N5820 Schottky Diode

      

    1N5821 Schottky Diode

      

    1n5822 3a schottky diode

      
    Quality 1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package for sale

    1N5820 1N5821 1N5822 Schottky Barrier Rectifier Diode IN5822 DO 27 Package

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